TUP Cubic silicon carbide 3C -SiC Questions

Cubic silicon carbide 3C -SiC is one of the semiconductor materials that many researchers want to study because it shows many physical properties that herald the possibility of its use in important applications in industry such as its use in storage in computers and That’s after adding one of the transitional elements to it. One of the researchers chose to study the cubic crystal of silicon carbide 3C-SiC in the case of a single crystalline, to study the thermal, electrical and electrical properties. its magnetism. Before it started, it was necessary to think about how to grow this material and then study the composition and then touches on other physical properties, we will now follow the steps taken by this researcher: Through your solid state physics course: 1- What are the methods that can be used to grow a single crystal? 2- If 3C-SiC belongs to the structure of what is known as ZnS, how many atoms are in the unit cell? 3- What are the positions that the Si atoms can occupy and what are the positions of the C atoms. (Illustrate this by drawing). 4- What kind of bonds can be formed between the atoms in this crystal? 5- The following figure shows the X-ray spectrum for the study of a single crystal of 3C-SiC extracted from one of the studies that the researcher studied:6- What do the numbers shown in the drawing mean, for example (002) 3C -SiC or (111) 3C -SiC7- Looking at the above figure, is there a difference in crystal growth at different temperatures? Which one is better in your opinion, and why? 8- If we take as an example that the researcher is interested in studying (002) 3C -SiC in single crystal, as it is clear in the previous X-ray spectrum that ° 41. 3 = 20, if the wavelength of the X-rays used to study this sample is 4° 1 1.54 = 1, find the perpendicular distance between the planes and then calculate the lattice constant for this sample9- Manganese was introduced, Mn, to a single crystal of silicon carbide, in order to know the potential ofPrediction of magnetic properties10- What are the possibilities of locations where a manganese atom can be located? (3 clear possibilities)(Single crystal after growth – The monocrystal after the entry of Mn into – the monocrystal after the fermentation or heating process)-The previous figure shows a truncated part of the X-ray spectrum of silicon carbide towards 002 -11- What notes can you take from this format? Can you predict what happened to a silicon carbide monocrystal at the different conditions shown in the figure?12- Explain why fermentation or annealing is important. (research question)13- If the radius of Si = 0.11 nm and for C = 0.078 nm and for Mn= 0.08. Do you expect that the introduction of manganese into the silicon carbide crystal led to Elongation or compression of the crystal? How do you infer that?14- How many vibration patterns are in this crystal?15- Do you expect that this crystal can absorb the spectrum of electromagnetic radiation Fallen on her? Why?16- Find the heat capacity of silicon carbide at a temperature of 300 K according to a model Debye If you know that the Debye temperature of SiC-3C silicon carbide is 1200 K, Compare it with the scientific result if you know that ( Cv=0.69 J g-1 ?C­-1 )17- Find the thermal conductivity of SiC-3C and compare it with the results of previous studies if you know The experimental result for the thermal conductivity of SiC-3C at a temperature of 300 K is 6.3 W (cm-1 ?C-1)18- Can the Drude model be applied to study the electrical properties of carbide silicon? Why?19- Draw the energy bands of silicon carbide according to the energy band theory